Characteristic of (Pb1-xZnx)S tandem structured quantum dot-sensitized solar cell having wide light absorbance

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 2, 2011, Pages 631-633

  Shin, Inyoung ^a   Seo, Hyunwoong ^a   Son, Min Kyu ^a   Kim, Jin Kyoung ^a   Kim, Heeje ^a  

^a Pusan National University   (South Korea)

Author keywords

(Pb1 xZnx)S; Multilayer; Quantum dot sensitized solar cell; SILAR method

Indexed keywords

(PB1-XZNX)S; ABSORBANCES; AUGER EFFECTS; CDS; DIPPING CYCLES; IV CHARACTERISTICS; QUANTUM DOT; QUANTUM DOT MATERIALS; QUANTUM DOT-SENSITIZED SOLAR CELL; RUTHENIUM DYE; SILAR METHOD; TANDEM STRUCTURE;

CADMIUM COMPOUNDS; CADMIUM SULFIDE; MULTILAYERS; RUTHENIUM; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM DOTS; SOLAR CELLS; ZINC;

LEAD;

EID: 79951694546     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000513     Document Type: Article

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