Interfacial electronic properties of Au-GaAs interfaces studied by photomodulation Raman spectroscopy (pump-probe technique)

Journal of Raman Spectroscopy

Volumn 42, Issue 2, 2011, Pages 149-152

  El Brolossy, T A ^a,b   Negm, S ^c   Talaat, H ^b  

^a KING FAISAL UNIVERSITY   (Saudi Arabia)

^b Ain Shams University   (Egypt)

^c BENHA UNIVERSITY   (Egypt)

Author keywords

charge trap lifetime; metal semiconductor interfaces; photomodulation Raman

Indexed keywords

ELECTRIC FIELDS; ELECTRONIC PROPERTIES; GOLD COMPOUNDS; III-V SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; PROBES; PUMPS; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

CHARGE TRAP; CHARGE TRAP LIFETIME; INTERFACIAL PROPERTY; LONGITUDINAL OPTICAL PHONONS; METAL SEMICONDUCTOR INTERFACE; OPTICAL PHONON SCATTERING; PHOTO MODULATION; PHOTOMODULATION RAMAN; PUMP BEAMS; PUMP-PROBE TECHNIQUE;

GALLIUM ARSENIDE;

EID: 79951629366     PISSN: 03770486     EISSN: 10974555     Source Type: Journal    
DOI: 10.1002/jrs.2635     Document Type: Article

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