Fabrication of transparent and flexible organic field-effect transistors with solution-processed graphene source-drain and gate electrodes

Applied Physics Express

Volumn 4, Issue 2, 2011, Pages

  Suganuma, Koichi ^a   Watanabe, Shunichiro ^a   Gotou, Takuya ^b   Ueno, Keiji ^a  

^a SAITAMA UNIVERSITY   (Japan)

^b MITSUBISHI GAS CHEMICAL COMPANY INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

A-THERMAL; ACTIVE LAYER; FLEXIBLE POLYIMIDE; FLEXIBLE SUBSTRATE; GATE DIELECTRIC LAYERS; GATE ELECTRODES; GLASS SUBSTRATES; ORGANIC ACTIVE LAYERS; P-TYPE; POLY(3-HEXYLTHIOPHENE) TRANSISTORS; SOLUTION-PROCESSED; SOURCE-DRAIN; SOURCE-DRAIN ELECTRODES; THERMAL REDUCTION;

FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GATES (TRANSISTOR); GRAPHENE; GRAPHITE ELECTRODES; HOLE MOBILITY; OXIDE FILMS; POLYIMIDES; POLYMERIC FILMS; REFRACTORY METAL COMPOUNDS; SUBSTRATES;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 79951588162     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.4.021603     Document Type: Article

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