U-shaped bilayer graphene channel transistor with very high I on/Ioff ratio

Electronics Letters

Volumn 47, Issue 3, 2011, Pages 199-200

  Moktadir, Z ^a   Boden, S A ^a   Ghiass, A ^a   Rutt, H ^a   Mizuta, H ^a  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BACK GATES; BI-LAYER; CHANNEL CONDUCTANCE; CHANNEL TRANSISTORS; GRAPHENE TRANSISTORS; U-SHAPED;

MOS DEVICES;

GRAPHENE;

EID: 79551712772     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2010.3029     Document Type: Article

References (7)

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