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Volumn 315, Issue 1, 2011, Pages 119-122

Relevance of the purity level in a MetalOrganic Vapour Phase Epitaxy reactor environment for the growth of high quality pyramidal site-controlled Quantum Dots

(4) Dimastrodonato, V a Mereni, L O a Young, R J a Pelucchi, E a

a UNIVERSITY COLLEGE CORK (Ireland)

Author keywords

A1. Nanostructures; A3. Organometallic vapour phase epitaxy; B1. Arsenates; B2. Semiconducting IIIV materials

Indexed keywords

A1. NANOSTRUCTURES; A3. ORGANOMETALLIC VAPOUR PHASE EPITAXY; B1. ARSENATES; GAAS SUBSTRATES; HIGH QUALITY; INGAAS/ALGAAS; METAL-ORGANIC VAPOUR PHASE EPITAXY; OPTICAL QUALITIES; PURITY LEVEL; QUANTUM DOT; SEMI CONDUCTING III-V MATERIALS; SHARP EMISSION; SPECTRAL PURITY;

EPITAXIAL GROWTH; GALLIUM ALLOYS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOSTRUCTURES; ORGANOMETALLICS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS;

QUALITY CONTROL;

EID: 79551689867 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.09.011 Document Type: Article

Times cited : (9)

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