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Journal of Vacuum Science and Technology B

Volumn 29, Issue 1, 2011, Pages

Dielectric layers suitable for high voltage integrated trench capacitors

(5) Vom Dorp, J a Erlbacher, T b Bauer, A J b Ryssel, H a,b Frey, L a,b

a UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

b FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DIELECTRIC MATERIALS; FLUORINE COMPOUNDS; LEAKAGE CURRENTS; LOW-K DIELECTRIC; SILICA; SILICON NITRIDE; SILICON OXIDES; TEMPERATURE DISTRIBUTION;

CURRENT TRANSPORT MECHANISM; DIELECTRIC LAYER; DIELECTRIC STACK; LOW TEMPERATURE COEFFICIENTS; LOW-LEAKAGE CURRENT; PLANAR CAPACITORS; TEMPERATURE DEPENDENCE; TRENCH CAPACITORS;

NITROGEN COMPOUNDS;

EID: 79551646478 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3525283 Document Type: Conference Paper

Times cited : (11)

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