Theoretical insight into the electronic, optical and photocatalytic properties of InMO4 (M = V, Nb, Ta) photocatalysts

Physical Chemistry Chemical Physics

Volumn 13, Issue 7, 2011, Pages 2824-2833

  Li, Guo Ling ^a,b   Yin, Zhen ^a  

^a NANJING UNIVERSITY   (China)

^b DALIAN INSTITUTE OF CHEMICAL PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 79551643111     PISSN: 14639076     EISSN: None     Source Type: Journal    
DOI: 10.1039/b921143h     Document Type: Article

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42. Wannier excitons may also exist in semiconductor photocatalysts under light irradiation. In most cases, the thermal phonon energy of 25 meV at room temperature is typically sufficient to dissociate the Wannier excitons into free electrons and holes (S. Sun and L. R. Dalton, Introduction to Organic Electronic and Optoelectronic Materials and Devices, CRC Press, Boca Raton, Florida, 2007)
43. 2O, in which the Wannier excitons are rather stable at room temperature (A. Janotti C. G. Van de Walle Rep. Prog. Phys. 2009 72 126501, ref. 38)., In some sense, the Wannier excitons with large binding energies are similar to the Frenkel ones in hotoexcitation, charge carrier generation and separation. So in order to understand the photocatalytic processes on ZnO-like photocatalysts, both the free electronhole pairs and the Wannier excitons should be carefully taken into account.
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46. 47 NiOx is a p-type semiconductor and acts as a hole conductor.
47. The metallic Ni coexists with the loaded NiOx, see ref.12.