Homogeneous and inhomogeneous linewidth broadening of single polar GaN/AlN quantum dots

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages

  Demangeot, F ^a   Simeonov, D ^a   Dussaigne, A ^a   Butte R ^a   Grandjean, N ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC PHONONS; COUPLING COEFFICIENT; GAN/ALN QUANTUM DOTS; INAS; INHOMOGENEOUS BROADENING; LINEWIDTH BROADENING; LOW TEMPERATURES; MICROPHOTOLUMINESCENCE; NITROGEN SOURCES; ORDERS OF MAGNITUDE; SPECTRAL DIFFUSION; SURFACE DENSITY; TEMPERATURE DEPENDENT;

INDIUM ARSENIDE; LINEWIDTH; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MONOLAYERS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 79251637832     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200880971     Document Type: Article

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