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Materials Science Forum

Volumn 615 617, Issue , 2009, Pages 223-226

Investigation of graphene growth on 4H-SiC

(4) Castaing, A a Guy, O J a Lodzinski, M a Wilks, S P a

a SWANSEA UNIVERSITY (United Kingdom)

Author keywords

4 point measurement; Graphene; XPS

Indexed keywords

ATOMIC FORCE MICROSCOPY; GRAPHENE; SILICON CARBIDE; SURFACE ROUGHNESS; TOPOGRAPHY; ULTRAHIGH VACUUM; X RAY PHOTOELECTRON SPECTROSCOPY;

4H-SIC SUBSTRATE; BULK MATERIALS; ELECTRICAL CHARACTERISATION; EPITAXIAL GRAPHENE; GRAPHENE GROWTH; GRAPHENE LAYERS;

EPITAXIAL GROWTH;

EID: 79251545195 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.615-617.223 Document Type: Conference Paper

Times cited : (4)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.