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Journal of Applied Physics

Volumn 107, Issue 9, 2010, Pages

Phonon emission in germanium and silicon by electrons and holes in applied electric field at low temperature

(1) Wang, G a,b

a California Institute of Technology (United States)

b ARGONNE NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC PHONONS; APPLIED ELECTRIC FIELD; APPLIED FIELD; BIAS POLARITY; COLLECTION EFFICIENCY; CRYOGENIC DARK MATTER SEARCHES; DARK MATTER; DRIFT VELOCITIES; EFFECTIVE TEMPERATURE; ELECTRONS AND HOLES; FREQUENCY DISTRIBUTIONS; KELVIN TEMPERATURES; LOW TEMPERATURES; MAXWELLIAN DISTRIBUTION; NUCLEAR RECOIL; PHONON EMISSIONS; PHONON SIGNALS; SCATTERING INTERACTIONS; SEMICONDUCTING SUBSTRATES; SI DETECTORS; WEAKLY INTERACTING MASSIVE PARTICLES;

CRYOGENICS; ELECTRIC FIELDS; ELECTROMAGNETIC WAVE EMISSION; ELECTRONS; GALAXIES; GERMANIUM; IONIZATION; SEMICONDUCTING SILICON COMPOUNDS;

PHONONS;

EID: 79251493442 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3354095 Document Type: Article

Times cited : (13)

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