Absolute deformation potentials and robust ab initio model for band shifts induced by (001) biaxial strain in group IIIA-VA semiconductors

Applied Physics Letters

Volumn 98, Issue 2, 2011, Pages

  Kadantsev, Eugene S ^a   Hawrylak, Pawel ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO; AB INITIO CALCULATIONS; AB INITIO MODELS; BAND EDGE; BAND OFFSETS; BAND SHIFT; BIAXIAL STRAINS; DEFORMATION POTENTIAL; FINITE STRAIN; GAAS; HETEROSTRUCTURES; INAS; INP; REFERENCE LEVELS;

INDIUM ARSENIDE;

DEFORMATION;

EID: 78751482888     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3537815     Document Type: Article

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