Heterogeneously integrated InP/SOI laser using double tapered single-mode waveguides through adhesive die to wafer bonding

IEEE International Conference on Group IV Photonics GFP

Volumn , Issue , 2010, Pages 22-24

  Lamponi, M ^a,b   Keyvaninia, S ^c   Pommereau, F ^b   Brenot, R ^b   De Valicourt, G ^b   Lelarge, F ^b   Roelkens, G ^c   Van Thourhout, D ^c   Messaoudene, S ^d   Fedeli, J M ^d   Duan, G H ^b  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b ALCATEL THALES III V LAB   (France)

^c GHENT UNIVERSITY   (Belgium)

^d CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ADIABATIC MODE; BCB BONDING; HIGH POWER CONVERSION; HYBRID LASERS; LOW THRESHOLD CURRENT; MW OUTPUT; PULSED OPERATION; ROOM TEMPERATURE; SINGLE MODE WAVEGUIDES;

CONVERSION EFFICIENCY; PHOTONICS; WAFER BONDING;

PULSED LASERS;

EID: 78651373844     PISSN: 19492081     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/GROUP4.2010.5643441     Document Type: Conference Paper

References (6)

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3. A.W. Fang, et al. , "Hybrid silicon evanescent devices", Materials Today, Volume 10, Issues 7-8, p. 28-35, 2007.
4. B. Ben Bakir, et al. , "Electrically driven hybrid Si/III-V lasers based on adiabatic mode transformers ", Proceddings of the SPIE Conference Photonics Europe, Bruxelles, 2010.
5. S. Keyvaninia, et al. , "Engineering the heterogeneously integrated III-V/SOI tunable laser", 14th Annual Symposium of the IEEE Photonics Benelux Chapter, Belgium, p.141-144, 2009.
6. G. Roelkens, et al. , "III-V/Si photonics by die-to-wafer bonding" , Materials Today, Volume 10, Issues 7-8, p.36-43, 2007.