-
1
-
-
34147105048
-
Recent advances in telecommunications avalanche photodiodes
-
Jan.
-
J. C. Campbell, "Recent advances in telecommunications avalanche photodiodes," J. Lightw. Technol., vol. 25, no. 1, pp. 109-121, Jan. 2007.
-
(2007)
J. Lightw. Technol.
, vol.25
, Issue.1
, pp. 109-121
-
-
Campbell, J.C.1
-
2
-
-
0023670639
-
Multigigabit-per-second avalanche photodiode lightwave receivers
-
Oct.
-
B. L. Kasper and J. C. Campbell, "Multigigabit-per-second avalanche photodiode lightwave receivers," J. Lightw. Technol., vol. LT-5, no. 10, pp. 1351-1364, Oct. 1987.
-
(1987)
J. Lightw. Technol.
, vol.LT-5
, Issue.10
, pp. 1351-1364
-
-
Kasper, B.L.1
Campbell, J.C.2
-
3
-
-
65249164407
-
Over-Gb/s mesa-structure APDs with high reliability
-
presented at the, Cannes, France, Paper We3.P.45
-
K. Shiba, T. Nakata, S. Watanabe, E. Mizuki, T. Chikuma, T. Masuta, and K. Makita, "Over-Gb/s mesa-structure APDs with high reliability," presented at the Eur. Conf. Optical Communications, Cannes, France, 2006, Paper We3.P.45.
-
(2006)
Eur. Conf. Optical Communications
-
-
Shiba, K.1
Nakata, T.2
Watanabe, S.3
Mizuki, E.4
Chikuma, T.5
Masuta, T.6
Makita, K.7
-
4
-
-
2442428605
-
High-speed avalanche photodiode with a neutral absorption layer for 1.55 μ m wavelength
-
Y. Hirota, S. Ando, and T. Ishibashi, "High-speed avalanche photodiode with a neutral absorption layer for 1.55 μ m wavelength," Jpn. J. Appl. Phys., vol. 43, no. 3A, pp. L375-L377, 2004.
-
(2004)
Jpn. J. Appl. Phys.
, vol.43
, Issue.3 A
-
-
Hirota, Y.1
Ando, S.2
Ishibashi, T.3
-
5
-
-
0037475023
-
InGaAs/InAlAs avalanche photodiode with undepleted absorber
-
Mar.
-
N. Li, R. Sidhu, X. Li, F. Ma, X. Zheng, S. Wang, G. Karve, S. Demiguel, A. L. Holmes, Jr., and J. C. Campbell, "InGaAs/InAlAs avalanche photodiode with undepleted absorber," Appl. Phys. Lett., vol. 82, no. 13, pp. 2175-2177, Mar. 2003.
-
(2003)
Appl. Phys. Lett.
, vol.82
, Issue.13
, pp. 2175-2177
-
-
Li, N.1
Sidhu, R.2
Li, X.3
Ma, F.4
Zheng, X.5
Wang, S.6
Karve, G.7
Demiguel, S.8
Holmes Jr., A.L.9
Campbell, J.C.10
-
6
-
-
0023670581
-
Ultrawide-band long-wavelength p-i-n photodetectors
-
Oct.
-
J. E. Bowers and C. A. Burrus, "Ultrawide-band long-wavelength p-i-n photodetectors," J. Lightw. Technol., vol. LT-5, no. 10, pp. 1339-1350, Oct. 1987.
-
(1987)
J. Lightw. Technol.
, vol.LT-5
, Issue.10
, pp. 1339-1350
-
-
Bowers, J.E.1
Burrus, C.A.2
-
7
-
-
0011346614
-
High-sensitivity 40-Gb/s receiver with a wideband In- AlAs waveguide avalanche photodiode
-
presented at the, Copenhagen, Denmark, Paper 10.5.1
-
T. Nakata, T. Takeuchi, K. Makita, Y. Amamiya, T. Kato, Y. Suzuki, and T. Torikai, "High-sensitivity 40-Gb/s receiver with a wideband In- AlAs waveguide avalanche photodiode," presented at the Eur. Conf. Optical Communications, Copenhagen, Denmark, 2002, Paper 10.5.1.
-
(2002)
Eur. Conf. Optical Communications
-
-
Nakata, T.1
Takeuchi, T.2
Makita, K.3
Amamiya, Y.4
Kato, T.5
Suzuki, Y.6
Torikai, T.7
-
8
-
-
33749326096
-
10 Gbit/s asymmetric waveguide APD with high sensitivity of -30 dBm
-
Sep.
-
K. Shiba, T. Nakata, T. Takeuchi, T. Sasaki, and K. Makita, "10 Gbit/s asymmetric waveguide APD with high sensitivity of -30 dBm," Electron. Lett., vol. 42, no. 20, pp. 1177-1178, Sep. 2006.
-
(2006)
Electron. Lett.
, vol.42
, Issue.20
, pp. 1177-1178
-
-
Shiba, K.1
Nakata, T.2
Takeuchi, T.3
Sasaki, T.4
Makita, K.5
-
9
-
-
0031249129
-
High-speed response of uni-traveling carrier photodiodes
-
pt., Oct.
-
T. Ishibashi, S. Kodama, N. Shimizu, and T. Furuta, "High-speed response of uni-traveling carrier photodiodes," Jpn. J. Appl. Phys., vol. 36, no. 10, pt. Part 1, pp. 6263-6268, Oct. 1997.
-
(1997)
Jpn. J. Appl. Phys.
, vol.36
, Issue.10 PART 1
, pp. 6263-6268
-
-
Ishibashi, T.1
Kodama, S.2
Shimizu, N.3
Furuta, T.4
-
10
-
-
78651274573
-
-
[Online]. Available, 2010
-
[Online]. Available: http://www.cfp-msa.org/Apr. 1, 2010
-
-
-
-
11
-
-
34247275294
-
40 Gbit/s waveguide avalanche photodiodes with p-type absorption layer and thin InAlAs multiplication layer
-
Mar.
-
S. Shimizu, K. Shiba, T. Nakata, K. Kasahara, and K. Makita, "40 Gbit/s waveguide avalanche photodiodes with p-type absorption layer and thin InAlAs multiplication layer," Electron. Lett., vol. 43, no. 8, pp. 476-477, Mar. 2007.
-
(2007)
Electron. Lett.
, vol.43
, Issue.8
, pp. 476-477
-
-
Shimizu, S.1
Shiba, K.2
Nakata, T.3
Kasahara, K.4
Makita, K.5
-
12
-
-
0024664123
-
Frequency response of InP/InGaAsP/InGaAs avalanche photodiodes
-
May
-
J. C. Campbell, B. C. Johnson, J. G. Qua, and W. T. Tsang, "Frequency response of InP/InGaAsP/InGaAs avalanche photodiodes," J. Lightw. Technol., vol. 7, no. 5, pp. 778-784, May 1989.
-
(1989)
J. Lightw. Technol.
, vol.7
, Issue.5
, pp. 778-784
-
-
Campbell, J.C.1
Johnson, B.C.2
Qua, J.G.3
Tsang, W.T.4
-
13
-
-
0025419283
-
Frequency response theory for multilayer photodiodes
-
Apr.
-
J. N. Hollenhorst, "Frequency response theory for multilayer photodiodes," J. Lightw. Technol., vol. 8, no. 4, pp. 531-537, Apr. 1990.
-
(1990)
J. Lightw. Technol.
, vol.8
, Issue.4
, pp. 531-537
-
-
Hollenhorst, J.N.1
-
14
-
-
0242269421
-
Monte Carlo simulations of the bandwidth of InAlAs avalanche photodiodes
-
Nov.
-
F. Ma, N. Li, and J. C. Campbell, "Monte Carlo simulations of the bandwidth of InAlAs avalanche photodiodes," IEEE Trans. Electron. Devices, vol. 50, no. 11, pp. 2291-2294, Nov. 2003.
-
(2003)
IEEE Trans. Electron. Devices
, vol.50
, Issue.11
, pp. 2291-2294
-
-
Ma, F.1
Li, N.2
Campbell, J.C.3
-
15
-
-
0032022918
-
Performance of thin separate absorption, charge, and multiplication avalanche photodiodes
-
Mar.
-
K. A. Anselm, H. Nie, C. Hu, C. Lenox, P.Yuan, G. Kinsey, J. C. Campbell, and B. G. Streetman, "Performance of thin separate absorption, charge, and multiplication avalanche photodiodes," IEEE J. Quantum Electron., vol. 34, no. 3, pp. 482-490, Mar. 1998.
-
(1998)
IEEE J. Quantum Electron.
, vol.34
, Issue.3
, pp. 482-490
-
-
Anselm, K.A.1
Nie, H.2
Hu, C.3
Lenox, C.4
Yuan, P.5
Kinsey, G.6
Campbell, J.C.7
Streetman, B.G.8
-
16
-
-
0022114822
-
1-y
-
Sep.
-
1-y ," IEEE J. Quantum Electron., vol. QE-21, no. 9, pp. 1326-1338, Sep. 1985.
-
(1985)
IEEE J. Quantum Electron.
, vol.QE-21
, Issue.9
, pp. 1326-1338
-
-
Osaka, F.1
Mikawa, T.2
Kaneda, T.3
-
17
-
-
0025503567
-
Impact ionization rates in (100) Al in As
-
Oct.
-
I.Watanabe, T. Torikai, K. Makita, K. Fukushima, and T. Uji, "Impact ionization rates in (100) Al In As," IEEE Electron. Device Lett., vol. 11, no. 10, pp. 437-438, Oct. 1990.
-
(1990)
IEEE Electron. Device Lett.
, vol.11
, Issue.10
, pp. 437-438
-
-
Watanabe, I.1
Torikai, T.2
Makita, K.3
Fukushima, K.4
Uji, T.5
-
18
-
-
0034297374
-
InAlAs avalanche photodiodes with very thin multiplication layer of 0.1 μ m for highspeed and low-voltage-operation optical receiver
-
Oct.
-
T. Nakata, I. Watanabe, K. Makita, and T. Torikai, "InAlAs avalanche photodiodes with very thin multiplication layer of 0.1 μ m for highspeed and low-voltage-operation optical receiver," Electron. Lett., vol. 36, no. 21, pp. 1807-1809, Oct. 2000.
-
(2000)
Electron. Lett.
, vol.36
, Issue.21
, pp. 1807-1809
-
-
Nakata, T.1
Watanabe, I.2
Makita, K.3
Torikai, T.4
-
19
-
-
0034196382
-
InP/InGaAs uni-traveling- carrier photodiodes
-
Jun.
-
T. Ishibashi, T. Furuta, H. Furushima, S. Kodama, H. Ito, T. Nagatsuma, N. Shimizu, and Y. Miyamoto, "InP/InGaAs uni-traveling- carrier photodiodes," IEICE Trans. Electron., vol. E-83-C, no. 6, pp. 938-949, Jun. 2000.
-
(2000)
IEICE Trans. Electron.
, vol.E-83-C
, Issue.6
, pp. 938-949
-
-
Ishibashi, T.1
Furuta, T.2
Furushima, H.3
Kodama, S.4
Ito, H.5
Nagatsuma, T.6
Shimizu, N.7
Miyamoto, Y.8
-
20
-
-
0028447888
-
110-GHz, 50%-efficiency mushroom-mesa waveguide p-i-n photodiode for a 1.55-μ m wavelength
-
Jun.
-
K. Kato, A. Kozen, Y. Muramoto, Y. Itaya, T. Nagatsuma, and M. Yaita, "110-GHz, 50%-efficiency mushroom-mesa waveguide p-i-n photodiode for a 1.55-μ m wavelength," IEEE Photon. Technol. Lett., vol. 6, no. 6, pp. 719-721, Jun. 1994.
-
(1994)
IEEE Photon. Technol. Lett.
, vol.6
, Issue.6
, pp. 719-721
-
-
Kato, K.1
Kozen, A.2
Muramoto, Y.3
Itaya, Y.4
Nagatsuma, T.5
Yaita, M.6
-
21
-
-
0031168455
-
Design and performance of InAlGaAs/InAlAs superlattice avalanche photodiodes
-
Jun.
-
I.Watanabe, M. Tsuji, M. Hayashi, K. Makita, and K. Taguchi, "Design and performance of InAlGaAs/InAlAs superlattice avalanche photodiodes," IEEE J. Lightw. Technol., vol. 15, no. 6, pp. 1012-1019, Jun. 1997.
-
(1997)
IEEE J. Lightw. Technol.
, vol.15
, Issue.6
, pp. 1012-1019
-
-
Watanabe, I.1
Tsuji, M.2
Hayashi, M.3
Makita, K.4
Taguchi, K.5
-
22
-
-
0011589052
-
Sensitivity of avalanche photodetector receivers for high-bit-rate long-wavelength optical communication systems
-
New York: Academic
-
S. R. Forrest, "Sensitivity of avalanche photodetector receivers for high-bit-rate long-wavelength optical communication systems," in Semiconductor and Semimetals, 22-D. New York: Academic, pp. 329-385.
-
Semiconductor and Semimetals
, vol.22-D
, pp. 329-385
-
-
Forrest, S.R.1
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