Annealing effects on Bi doped Se-Te system

Integrated Ferroelectrics

Volumn 120, Issue 1, 2010, Pages 15-17

  Suri, N ^a   Khanna, P K ^a   Sharma, R P ^a  

^a CENTRAL ELECTRONICS ENGINEERING RESEARCH INSTITUTE   (India)

Author keywords

Amorphous chalcogenide materials; Chalcogenide glasses; Crystallization; Glass transition temperature; Thermal stability

Indexed keywords

AMORPHOUS CHALCOGENIDE; ANNEALING EFFECTS; BI-DOPED; CHALCOGENIDE GLASS; CHALCOGENIDE GLASSES; DEFECT FORMATION; ELECTRICAL PROPERTY; EXPERIMENTAL DATA; GLASS TRANSITION TEMPERATURE; RELATIVE POSITIONS; THERMAL STABILITY; THERMAL-ANNEALING;

ANNEALING; CERAMIC MATERIALS; CHALCOGENIDES; CRYSTALLIZATION; ELECTRIC PROPERTIES; GLASS; OPTICAL PROPERTIES; PHASE CHANGE MEMORY; RARE EARTH COMPOUNDS; SEMICONDUCTING SELENIUM COMPOUNDS; TEMPERATURE; THERMODYNAMIC STABILITY;

GLASS TRANSITION;

EID: 78650907181     PISSN: 10584587     EISSN: 16078489     Source Type: Journal    
DOI: 10.1080/10584587.2010.491723     Document Type: Conference Paper

References (3)

1. A. Zakery and S. R. Elliott, Optical properties and applications of Chalcogenides: a review. J. Non-Cryst. Solids 330, 1 (2003).
2. K. V. Reddy and A. K. Bhatnagar, Electrical and optical studies on amorphous Se-Te alloys. J. Phys D: Appl. Phys 25, 1810 (1992).
3. D. Islam and R. L. Cappelleti, Structural evolution during annealing of laser-ablation-deposited Ge-Sn-Se amorphous films. Phys. Rev B 44, 2516 (1991).