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Journal of Applied Physics

Volumn 108, Issue 12, 2010, Pages

Electronic structure and magnetism of transition metal doped Zn 12O12 clusters: Role of defects

(3) Ganguli, Nirmal a Dasgupta, Indra b Sanyal, Biplab c

a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY (India)

b Department of Solid State Physics ^* (India)

c UPPSALA UNIVERSITY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

3D TRANSITION METALS; AB INITIO; ANTIFERRO-MAGNETIC INTERACTIONS; CHARGED DEFECTS; COMPREHENSIVE STUDIES; DEFECT-FREE; DENSITY-FUNCTIONAL CALCULATIONS; FERROMAGNETIC PROPERTIES; FORMATION ENERGIES; GENERALIZED GRADIENT APPROXIMATIONS; HUBBARD; INDUCED MAGNETISM; NANO-ENGINEERING; OXIDATION STATE; SPINTRONIC APPLICATIONS; TM DOPANT; ZNO;

ANTIFERROMAGNETISM; DENSITY FUNCTIONAL THEORY; DOPING (ADDITIVES); ELECTRONIC STRUCTURE; FERROMAGNETIC MATERIALS; FERROMAGNETISM; MAGNETIC PROPERTIES; MANGANESE; SURFACE DEFECTS; ZINC OXIDE;

MANGANESE COMPOUNDS;

EID: 78650867936 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3525649 Document Type: Article

Times cited : (25)

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