V th control by complementary hot-carrier injection for SONOS multi-level cell flash memory

IEEE Transactions on Electron Devices

Volumn 56, Issue 12, 2009, Pages 3027-3032

  Zhang, Gang ^a,b   Yoo, Won Jong ^a  

^a Sungkyunkwan University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

Complementary hot carrier injection (CHCI); Multi level cell (MLC); Polysilicon oxide nitride oxide silicon (SONOS) Flash memory; V th control

Indexed keywords

DRAIN BIAS; ENDURANCE RELIABILITY; HOT CARRIER INJECTION; HOT HOLES; MULTI-LEVEL CELL FLASH MEMORY; MULTILEVEL CELL; POLYSILICON OXIDE NITRIDE OXIDE SILICONS; POTENTIAL TRANSFORMATIONS; STEADY STATE; TUNNEL OXIDES;

POLYSILICON;

FLASH MEMORY;

EID: 78650665408     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2030427     Document Type: Article

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