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Applied Physics Letters

Volumn 97, Issue 22, 2010, Pages

Indirect excitation of Er3+ ions in silicon nitride films prepared by reactive evaporation

(5) Steveler, E a Rinnert, H a Devaux, X a Dossot, M b Vergnat, M a

a INSTITUT JEAN LAMOUR (France)

b Laboratoire de Chimie Physique et Microbiologie pour l'Environnement (France)

Author keywords

[No Author keywords available]

Indexed keywords

ER-DOPED; LOCALIZED STATE; NITROGEN IONS; PL EXCITATIONS; PUMP EXCITATION; RAMAN SPECTROMETRIES; REACTIVE EVAPORATION; SILICON NANOCRYSTALS; SILICON NITRIDE FILM; SILICON NITRIDE MATRIX; TIME-RESOLVED;

ABSORPTION SPECTROSCOPY; ERBIUM; EVAPORATION; IONS; PUMPS; SILICON NITRIDE; SPECTROMETRY; TRANSMISSION ELECTRON MICROSCOPY;

EXCITED STATES;

EID: 78650644956 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3521279 Document Type: Article

Times cited : (14)

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