ZnO nanowires film UV detector based MSM structure

Proceedings - 2010 8th International Vacuum Electron Sources Conference and Nanocarbon, IVESC 2010 and NANOcarbon 2010

Volumn , Issue , 2010, Pages 351-352

  He, Y N ^a   Zhang, W ^a   Zhang, S C ^a   Qi, M ^a   Ye, M ^a   Li, X ^a   Xu, Y L ^a  

^a XI'AN JIAOTONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

LASER DIODES; LOW COSTS; METAL SEMICONDUCTOR METAL; MSM STRUCTURES; RESPONSE PROPERTIES; STRUCTURE-BASED; UV DETECTOR; UV ILLUMINATIONS; UV SPECTRAL RANGES; WIDE BAND GAP; ZNO; ZNO NANOWIRES;

ELECTRON SOURCES; GALLIUM NITRIDE; METAL DETECTORS; NANOWIRES; OPTOELECTRONIC DEVICES; VACUUM;

ZINC OXIDE;

EID: 78650631103     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IVESC.2010.5644465     Document Type: Conference Paper

References (4)

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2. Y He, W Zhang, Y Cui, et al. Self-assembly growth of the aligned ZnO nanowire arrays and its metal-contact properties. Journal of the Chinese Ceramic Society, 2010, 38 (1): 17-20
3. Y W Heo, B S Kang, L C Tien, et al. UV photoresponse of single ZnO nano wires, Appl. Phys. A 80 (2005), 497-499
4. A Bera, D Basak, Carrier relaxation through two electron process during photoconduction in highly UV sensitive quasi-one-dimensional ZnO nanowires. Appl. Phys. Lett 93 (2008), 053102