Molecular modulation of conductivity on H-terminated silicon-on-insulator substrates

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Volumn 6, Issue 24, 2010, Pages 2892-2899

  Dubey, Girjesh ^a,b   Rosei, Federico ^b,c   Lopinski, Gregory P ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b INRS EMT   (Canada)

^c MCGILL UNIVERSITY   (Canada)

Author keywords

Hall effect; hydrogen termination; molecular adsorption; silicon on insulator; surface conductivity

Indexed keywords

ACCUMULATION LAYERS; BANDBENDING; GAS EXPOSURE; HALL COEFFICIENT; HALL EFFECT MEASUREMENT; HYDROGEN TERMINATION; HYDROGEN-TERMINATED SILICON; INVERSION CHANNELS; METALLIC GATES; MOLECULAR ADSORPTION; MOLECULAR MODULATION; MOLECULAR SPECIES; P-TYPE; P-TYPE SUBSTRATES; ROOM TEMPERATURE; SEMI-CONDUCTOR SURFACES; SILICON-ON-INSULATOR; SILICON-ON-INSULATOR SUBSTRATES; SURFACE CONDUCTION; SURFACE CONDUCTIVITY; TRANSPORT MEASUREMENTS; VACUUM SYSTEM;

AMMONIA; CHARGE TRANSFER; ELECTRIC CONDUCTIVITY; FIELD EFFECT TRANSISTORS; GYRATORS; HALL EFFECT; HYDROGEN; MAGNETIC FIELD EFFECTS; MONOLAYERS; PHYSISORPTION; PYRIDINE; SUBSTRATES; TRANSPORT PROPERTIES; WATER VAPOR;

SEMICONDUCTING SILICON COMPOUNDS;

PYRIDINE; PYRIDINE DERIVATIVE; SILICON; WATER;

ADSORPTION; ARTICLE; CHEMISTRY; ELECTRIC CONDUCTIVITY; SEMICONDUCTOR; SURFACE PROPERTY;

ADSORPTION; ELECTRIC CONDUCTIVITY; PYRIDINES; SEMICONDUCTORS; SILICON; SURFACE PROPERTIES; WATER;

EID: 78650407063     PISSN: 16136810     EISSN: 16136829     Source Type: Journal    
DOI: 10.1002/smll.201001285     Document Type: Article

References (32)

1. W. H. Brattain, J. Bardeen, Bell Syst. Tech. J. 1953, 32, 1.
2. W. L. Brown, Phys. Rev. 1953, 91, 518.
3. R. H. Kingston, Phys. Rev. 1954, 93, 346.
4. R. H. Kingston, Phys. Rev. 1955, 98, 1766.
5. A. A. Talin, L. L. Hunter, F. Leonard, B. Rokad, Appl. Phys. Lett. 2006, 89, 153102.
6. X. T. Zhou, J. Q. Hu, C. P. Li, D. D. D. Ma, C. S. Lee, S. T. Lee, Chem. Phys. Lett. 2003, 369, 220.
7. Y. L. Bunimovich, Y. S. Shin, W. S. Yeo, M. Amori, G. Kwong, J. R. Heath, J. Am. Chem. Soc. 2006, 128, 16323.
8. Y. Cui, Q. Wei, H. Park, C. M. Lieber, Science 2001, 293, 1289.
9. J. Hahm, C. M. Lieber, Nano Lett. 2004, 4, 51.
10. I. Park, Z. Li, X. Li, A. P. Pisano, R. S. Williams, Biosens. Bioelectron. 2007, 22, 2065.
11. E. Stern, J. F. Klemic, D. A. Routenberg, P. N. Wyrembak, D. B. Turner-Evans, A. D. Hamilton, D. A. LaVan, T. M. Fahmy, M. A. Reed, Nature 2007, 445, 519.
12. G. Zheng, F. Patolsky, Y. Cui, W. U. Wang, C. M. Lieber, Nat. Biotechnol. 2005, 23, 1294.
13. S. Q. Lud, M. G. Nikolaides, I. Haase, M. Fischer, A. R. Bausch, ChemPhysChem 2006, 7, 379.
14. P. A. Neff, A. Serr, B. K. Wunderlich, A. R. Bausch, ChemPhysChem 2007, 8, 2133.
15. P. A. Neff, B. K. Wunderlich, S. Q. Lud, A. R. Bausch, Phys. Stat. Sol. A 2006, 203, 3417.
16. M. G. Nikolaides, S. Rauschenbach, A. R. Bausch, J. Appl. Phys. 2004, 95, 3811.
17. T. He, J. He, M. Lu, B. Chen, H. Pang, W. F. Reus, W. M. Nolte, D. P. Nackashi, P. D. Franzon, J. M. Tour, J. Am. Chem. Soc. 2006, 128, 14537.
18. W. Henrion, M. Rebien, H. Angermann, A. Röseler, Appl. Surf. Sci. 2002, 202, 199.
19. G. Oskam, P. M. Hoffmann, P. C. Searson, Phys. Rev. Lett. 1996, 76, 1521.
20. E. Yablonovitch, D. L. Allara, C. C. Chang, T. Gmitter, T. B. Bright, Phys. Rev. Lett. 1986, 57, 249.
21. G. Dubey, G. P. Lopinski, F. Rosei, Appl. Phys. Lett. 2007, 91, 232111.
22. S. A. Scott, W. Peng, A. M. Kiefer, H. Jiang, I. Knezevic, D. E. Savage, M. A. Eriksson, M. G. Lagally, ACS Nano 2009, 3, 1683.
23. S. Cristoloveanu, J. Electrochem. Soc. 1991, 138, 3131.
24. S. Cristoloveanu, Vacuum 1991, 42, 371.
25. S. Cristoloveanu, S. S. Li, Electrical Characterization of Silicon-on-Insulator Materials and Devices, Kluwer, Boston, MA, USA 1995.
26. S. Cristoloveanu, D. Munteanu, M. S. T. Liu, IEEE Trans. Electron Devices 2000, 47, 1018.
27. A. M. Ionescu, S. Cristoloveanu, D. Munteanu, T. Elewa, M. Gri, Solid-State Electron. 1996, 39, 1753.
28. Y. Shibata, M. Ichimura, E. Arai, Solid-State Electron. 2004, 48, 1249.
29. M. Ichimura, S. Ito, E. Arai, Solid-State Electron. 2002, 46, 545.
30. G. Mattei, V. Valentini, V. A. Yakovlev, Surf. Sci. 2002, 502, 58.
31. L. Osminkina, A. Vorontsov, E. Konstantinova, V. Timoshenko, P. Kashkarov, Semiconductors 2005, 39, 458.
32. G. S. Higashi, Y. J. Chabal, G. W. Trucks, K. Raghavachari, Appl. Phys. Lett. 1990, 56, 656.