Surface doping is more beneficial than bulk doping to the photocatalytic activity of vanadium-doped TiO2

Applied Catalysis B: Environmental

Volumn 101, Issue 3-4, 2011, Pages 333-342

  Chang, Sue min ^a   Liu, Wei szu ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Charge trapping; P n junctions; Photocatalytic activity; Surface and bulk doping; V doped TiO2

Indexed keywords

BULK DOPING; CHARGE DIFFUSION; CHEMICAL STATE; DETRIMENTAL EFFECTS; DOPED-TIO; ENERGY LEVEL; HEAVY DOPING; INTERFACIAL CHARGE TRANSFER; INTERFACIAL TRANSFER; MOLAR RATIO; P-N JUNCTION; PHOTO-ACTIVATED; PHOTOCATALYTIC ACTIVITIES; PHYSICOCHEMICAL PROPERTY; SURFACE DOPING; SURFACE LATTICE; SURFACE TRAPPED HOLES; TIO;

CHARGE TRANSFER; CHARGE TRAPPING; ELECTRON MOBILITY; ELECTRONIC STRUCTURE; ION EXCHANGE; IONS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS; TITANIUM DIOXIDE; VANADIUM; VANADIUM ALLOYS;

DOPING (ADDITIVES);

EID: 78650305708     PISSN: 09263373     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apcatb.2010.09.035     Document Type: Article

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