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Journal of Applied Physics

Volumn 108, Issue 10, 2010, Pages

Direct band gap GaP nanowires predicted through first principles

(2) Santos, Charley B E a Schmidt, T M a

a FEDERAL UNIVERSITY OF UBERLÂNDIA (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; CONDUCTION BAND OFFSET; CONFINEMENT EFFECTS; DIRECT BAND GAP; DIRECT BAND GAP SEMICONDUCTORS; ELECTRONIC APPLICATION; FIRST-PRINCIPLES; FIRST-PRINCIPLES CALCULATION; HYDROGEN SATURATION; INDIRECT BAND GAP; NEW DEVICES; OXIDE-CAP-LAYERS; POTENTIAL MATERIALS; SURFACE STATE;

ELECTRON MOBILITY; ENERGY GAP; GALLIUM ALLOYS; HETEROJUNCTIONS; HYDROGEN;

NANOWIRES;

EID: 78650286608 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3511340 Document Type: Conference Paper

Times cited : (15)

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