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Volumn , Issue , 2010, Pages 500-503
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Chemical bath method for Zns thin films preparation
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Author keywords
Chemical bath deposition; Semiconductor; ZnS
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Indexed keywords
AMMONIUM NITRATE;
ANNEALING PROCESS;
ARGON ATMOSPHERES;
BAND GAP ENERGY;
CDS THIN FILMS;
CHEMICAL BATH;
CHEMICAL REAGENTS;
CHEMICAL-BATH DEPOSITION;
CRITICAL PARAMETER;
CRYSTALLINE STRUCTURE;
CUBIC STRUCTURE;
DIFFRACTION PEAKS;
GLASS SUBSTRATES;
HIGH-QUALITY FILMS;
INITIAL VALUES;
MAGNETIC STIRRERS;
OPTICAL BAND GAP ENERGY;
SEMICONDUCTOR;
SOLAR APPLICATIONS;
STOICHIOMETRY RATIO;
ZINC CHLORIDE;
ZNS;
ZNS FILMS;
ZNS THIN FILMS;
AMMONIUM COMPOUNDS;
ARGON;
AUTOMATION;
CADMIUM COMPOUNDS;
CADMIUM SULFIDE;
CHLORINE COMPOUNDS;
CONTROL;
DEPOSITION;
DIFFRACTION;
ELECTRICAL ENGINEERING;
ENERGY DISPERSIVE SPECTROSCOPY;
ENERGY GAP;
POTASSIUM;
POTASSIUM HYDROXIDE;
PROCESS CONTROL;
STOICHIOMETRY;
SUBSTRATES;
THIN FILMS;
THIOUREAS;
UREA;
VAPOR DEPOSITION;
X RAY DIFFRACTION;
X RAY DIFFRACTION ANALYSIS;
ZINC;
ZINC SULFIDE;
FILM PREPARATION;
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EID: 78650285639
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/ICEEE.2010.5608612 Document Type: Conference Paper |
Times cited : (7)
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References (10)
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