High-performance hit solar cells for thinner silicon wafers

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2010, Pages 3137-3140

  Fujishima, Daisuke ^a   Inoue, Hirotada ^a   Tsunomura, Yasufumi ^a   Asaumi, Toshio ^a   Taira, Shigeharu ^a   Kinoshita, Toshihiro ^a   Taguchi, Mikio ^a   Sakata, Hitoshi ^a   Maruyama, Eiji ^a  

^a SANYO ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CELL FEATURES; CRYSTALLINE SI (C-SI); HETEROJUNCTION WITH INTRINSIC THIN LAYERS; HIGH CONVERSION EFFICIENCY; IMPROVED TECHNOLOGY; PRODUCTION COST; SI WAFER;

CONVERSION EFFICIENCY; HETEROJUNCTIONS; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SOLAR CELLS;

SILICON WAFERS;

EID: 78650158182     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2010.5614460     Document Type: Conference Paper

References (5)

1. M. Taguchi et al., "High efficiency HIT solar cell on thin (<100 μm) silicon wafer", 24th EUPVSC Proc., 2009, pp. 1690-1693.
2. Hirotada Inoue et al., "Improving the Conversion Efficiency and Decreasing the Thickness of the HIT Cell", 2009MRS Fall Meeting Proc., 2009. (in press).
3. M. Taguchi et al., "Improvement of the Conversion Efficiency of Polycrystalline Silicon Thin Film Solar Cell", 5th PVSEC Proc., 1990, pp. 689-692.
4. M. Tanaka et al., "Development of New a-Si/c-Si Heterojunction Solar Cells: ACJ-HIT (Artificially Constructed Junction-Heterojunction with Intrinsic Thin-Layer)", Jpn. J. Appl. Phys. 31, 1992, pp. 3518-3522.
5. S. Taira et al., "Temperature Properties of High-Voc HIT Cells", Renewable energy, 2006, pp. 115-118.