A metamorphic HEMT S-MMIC amplifier with 16.1 dB gain at 460 GHz

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2010, Pages

  Tessmann, A ^a   Leuther, A ^a   Loesch, R ^a   Seelmann Eggebert, M ^a   Massler, H ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

Grounded coplanar waveguide (GCPW); Low noise amplifier (LNA); Metamorphic high electron mobility transistor (mHEMT); Submillimeter wave monolithic integrated circuit (S MMIC)

Indexed keywords

COMPACT DESIGNS; DIE SIZE; GROUNDED COPLANAR WAVEGUIDES; INALAS/INGAAS; METAMORPHIC HEMTS; METAMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS; MMIC AMPLIFIERS; PEAK GAIN; SMALL-SIGNAL GAIN;

COMMUNICATION SYSTEMS; COPLANAR WAVEGUIDES; ELECTRON MOBILITY; INTEGRATED CIRCUITS; LOW NOISE AMPLIFIERS; MICROWAVE AMPLIFIERS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SUBMILLIMETER WAVES; TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 78650127989     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2010.5619608     Document Type: Conference Paper

References (13)

1. R. Lai, X.B. Mei, W.R. Deal, W. Yoshida, Y. M. Kim, P.H. Liu, J. Lee, J. Uyeda, V. Radisic, M. Lange, T. Gaier, L. Samoska, A. Fung, "Sub 50 nm InP HEMT Device with Fmax Greater than 1 THz," IEEE Int. Electron Devices Meeting, pp. 609-611, Dec. 2007.
2. J. Hacker, M. Seo, A. Young, Z. Griffith, M. Urteaga, T. Reed, and M. Rodwell., "THz MMICs based on InP HBT Technology," in IEEE MTT-S Int. Microwave Symp. Dig., May 2010, pp. 1126-1129.
3. W. R. Deal, "Solid-State Amplifiers for Terahertz Electronics," in IEEE MTT-S Int. Microwave Symp. Dig., pp. 1122-1125, May 2010.
4. nd International Conference on Indium Phosphide and Related Materials, pp. 425-430, May 2010.
5. H. J. Park, J. S. Rieh, M. Kim, and J. B. Hacker, "300 GHz Six-Stage Differential-Mode Amplifier," in IEEE MTT-S Int. Microwave Symp. Dig., May 2010, pp. 49-52.
6. D. Pukala, L. Samoska, T. Gaier, A. Fung, X. B. Mei, W. Yoshida, J. Lee, J. Uyeda, P. H. Liu, W. R. Deal, V. Radisic, R. Lai, "Submillimeter-Wave InP MMIC Amplifiers From 300-345 GHz", IEEE Microwave and Wireless Components Letters, vol. 18, no. 1, pp. 61-63, Jan. 2008.
7. A. Tessmann, A. Leuther, H. Massler, V. Hurm, M. Kuri, M. Zink, M. Riessle, R. Loesch, "High-Gain Submillimeter-Wave mHEMT Amplifier MMICs," in IEEE MTT-S Int. Microwave Symp. Dig., May 2010, pp. 53-56.
8. J. Hacker, M. Urteaga, D. Mensa, R. Pierson, M. Jones, Z. Griffith, M. Rodwell, "250 nm InP DHBT Monolithic Amplifiers with 4.8 dB Gain at 324 GHz," in IEEE MTT-S Int. Microwave Symp. Dig., June 2008, pp. 403-406.
9. W. R. Deal, X. B. Mei, V. Radisic, W. Yoshida, P.H. Liu, J. Uyeda, M. Barsky, T. Gaier, A. Fung, R. Lai, "Demonstration of a S-MMIC LNA with 16-dB Gain at 340-GHz", IEEE CSIC Symposium Digest, pp. 75-78, Oct. 2007.
10. W. R. Deal, X. B. Mei, V. Radisic, K. Leong, S. Sarkozy, B. Gorospe, J. Lee, P. H. Liu, W. Yoshida, J. Zhou, M. Lange, J. Uyeda, and R. Lai, "Demonstration of a 0.48 THz Amplifier Module Using InP HEMT Transistors," IEEE Microwave and Wireless Components Letters, vol. 20, no. 5, pp. 289-291, May 2010.
11. st International Conference on Indium Phosphide and Related Materials, pp. 196-199, May 2009.
12. L. Samoska, "Towards Terahertz MMIC Amplifiers: Present Status and Trends," in IEEE MTT-S Int. Microwave Symp. Dig., pp. 333-336, June 2006.
13. A. Leuther, A. Tessmann, H. Massler, R. Lösch, M. Schlechtweg, M. Mikulla, O. Ambacher, "35 nm Metamorphic HEMT MMIC Technology," 20th International Conference on Indium Phosphide and Related Materials, MoA3.3, May 2008.