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Volumn 2000-January, Issue , 2000, Pages 158-163

Development of chip-size silicon solar cells

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); POINT CONTACTS; SILICON; SILICON WAFERS; SOLAR CELLS;

EID: 78650089554     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2000.915778     Document Type: Conference Paper
Times cited : (16)

References (8)
  • 4
    • 0020089607 scopus 로고
    • Modeling and measurement of minority carrier lifetime versus doping in diffused layers of N +-P silicon diodes
    • D.J. Roulston, N.D. Arora and S.G. Chamberlain, "Modeling and Measurement of Minority Carrier Lifetime versus Doping in Diffused Layers of N +-P Silicon Diodes," IEEE Trans. Electron Devices, ED-29, 1982, p. 284.
    • (1982) IEEE Trans. Electron Devices , vol.ED-29 , pp. 284
    • Roulston, D.J.1    Arora, N.D.2    Chamberlain, S.G.3
  • 5
    • 0009509593 scopus 로고
    • Carrier mobilities in silicon empirically related to doping and field
    • D.M. Caughey and R.E. Thomas, "Carrier Mobilities in Silicon Empirically Related to Doping and Field," Proc. IEEE, 55, 1967, p2192.
    • (1967) Proc. IEEE , vol.55 , pp. 2192
    • Caughey, D.M.1    Thomas, R.E.2
  • 7
    • 0001339353 scopus 로고
    • Improved value for the silicon intrinsic carrier concentration from 275 to 375 K
    • A.B. Sproul and M.A. Green, "Improved value for the silicon intrinsic carrier concentration from 275 to 375 K," J. Appl. Phys., 70, 1991, p846.
    • (1991) J. Appl. Phys. , vol.70 , pp. 846
    • Sproul, A.B.1    Green, M.A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.