Modeling of InGaN PIN solar cells with defect traps and polarization interface charges

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2010, Pages 3378-3382

  Xiao, Y G ^a   Li, Z Q ^a   Lestrade, M ^a   Simon Li, Z M ^a  

^a Crosslight Software Inc   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CELL PERFORMANCE; DEFECT TRAPS; FILL FACTOR; INTERFACE CHARGE; PIEZOELECTRIC POLARIZATIONS;

DEFECTS; PHOTOVOLTAIC EFFECTS; PIEZOELECTRIC TRANSDUCERS; PIEZOELECTRICITY; POLARIZATION; SOLAR CELLS;

DEFECT DENSITY;

EID: 78650085519     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2010.5614115     Document Type: Conference Paper

References (27)

1. J Wu, W Walukiewicz, K M Yu, J W Ager, E E Haller, H Lu, W J Schaff, Y Saito, and Y Nanishi, "Unusual properties of the fundamental band gap of InN," Appl Phys Lett 80, 2002, pp. 3967-3969.
2. T Matsuoka, H Okamoto, M Nakao, H Harima, and E Kurimoto, "Optical bandgap energy of wurtzite InN," Appl Phys Lett 81, 2002, pp. 1246-1248.
3. 1-xN tandem PV structures," Sol Energy Mater Sol Cells 87, 2005, pp. 595-603.
4. J F Muth, J H Lee, I K Shmagin, R M Kolbas, H C Casey, B P Keller, U K Mishra, and S P Denbaars, "Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements," Appl Phys Lett 71, 1997, pp. 2572-2574.
5. R Singh, D Doppalapudi, T D Moustakas, and L T Romano, "Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition," Appl Phys Lett 70, 1997, pp. 1089-1091.
6. W Walukiewicz, J W Ager, K M Yu, Z Liliental-Weber, J Wu, S X Li, R E Jones, and J D Denlinger, "Structure and electronic properties of InN and InNrich group III-nitride alloys," J Phys D-Appl Phys 39, 2006, pp. R83-R89.
7. 1-xN alloys: full-solar-spectrum photovoltaic material system," J Appl Phys 94, 2003, pp. 6477-6482.
8. O Jani, I Ferguson, C Honsberg, and S Kurtz, "Desing and characterization of GN/lnGaN solar celss," Appl Phys Lett 91, 2007, pp. 132117.
9. C J Neufeld, N G Toledo, S C Cruz, M Iza, S P Den Baars, and U K Mishra, "High quantum efficiency InGaN/GaN solar cells with 2. 95 eV band gap," Appl Phys Lett 93, 2008, pp. 143502.
10. X H Zheng, R H Horng, D S Wuu, M T Chu, W Y Liao, M H Wu, R M Lin, and Y C Lu, "High-quality InGaN/GaN heterojunctions and their photovoltaic effects," Appl Phys Lett 93, 2008, pp. 261108.
11. X M Cao, S W Zeng, and B P Zhang, "Fabrication and characterization of InGaN p-i-n homojunction solar cell," Appl Phys Lett 95, 2009, pp. 173504.
12. Y H Kim, C SKim, S K Noh, J Y Leem, K Y Lim, B S O, and J P Song, in Materials and Devices for Optoelectronics MR S Proc 722, edited by R B Wehrspohn, R Maez, S Noda, and C Soukoulis (Material Research Society, Pittsburgh), 2002, p. 193.
13. P Kozodoy, J P. Ibbeston, H Marchand, P T Fini, S Keller, J S Speck, S P Den Baars, and U K Mishra, "Electrical characterization of GaN p-n junctions with and without threading dislocations," Appl Phys Lett 73, 1998, pp. 975-977.
14. F Bernadini and V Fiorentini, "Nonlinear macroscopic polarization in III-V nitrides: conceptual aspects and practical consequences," Phys Stat Sol (b) 216, 1999, p. 391.
15. F Bernadini and V Fiorentini, "Nonlinear macroscopic polarization in III-V nitride alloys," Phys Rev B 64, 2001, p. 085207171.
16. V Fiorentini, F Bernardini, and O Ambacher, "Evidence for nonlinear macroscopic polarization in III-V nitride alloy heterostructures," Appl Phys Lett 80, 2002, pp. 1204-1206.
17. APSYS 2009 and technical manuals, Copyright © Crosslight Software Inc., www.crosslight.com.
18. Y G Xiao, M Lestrade, Z Q Li, Z M Simon-Li, "Modeling of Si-based solar cells with V-grooved surface texture by Crosslight APSYS," Proc SPIE 6651, 2007, (8 pages).
19. Z Q Li, Y G Xiao, and Simon Li, "Two-dimensional simulation of GainP/GaAs/Ge triple junction solar cell", Phys Stat Sol (c) 4, 2007, pp. 1637-1640.
20. Z Q Li and Simon Li, "Sophisticated models replicate the effects of tunnel junctions," Compound Semicond 13, 2007, pp. 29-31.
21. P Yeh, Optical Waves in Layered Media, Copyright © John Wiley & Sons Inc., 1988.
22. http://ab-initio.mit.edulwiki/index.php/Meep; http://abinitio.mit. edulwiki/index.phplMeep-Tutorial/Materia-dispersion.
23. PC1 D, www.pv.unsw.edu.au/links/products/pc1d.asp.
24. Source NREL web page, http://rredc.nrel.gov/solarlspectra/am1.5/.
25. R Langer, J Simon, V Ortiz, N T Pelekanos, A Barski, R. Andre, and M. Godlewski, "Giant electric fields in unstrained GaN single quantum wells," Appl Phys Lett 74 (25), 1999, pp. 3827-3829. (Pubitemid 129308122)
26. P Lefebvre, A Morel, M Gallart, T Taliercio, J Allegre, B Gil, H Mathieu, B Damilano, N Grandjean, and J Massies, "High internal electric field in a graded-width InGaN/GaN quantum well: accurate determination by time-resolved photoluminescence spectroscopy," Appl Phys Lett 78 (9), 2001, pp. 1252-1254.
27. B Jampana, A Melton, M Jamil, I Ferguson, R Opila, and C Honsberg, "InGaN solar cell design by surface inversion caused by piezoelectric polarization," Proc. 34th PVSC, 2009, pp. 002175-002178.