Power SiC DMOSFET model accounting for JFET region nonuniform current distribution

2010 IEEE Energy Conversion Congress and Exposition, ECCE 2010 - Proceedings

Volumn , Issue , 2010, Pages 2222-2228

  Fu, Ruiyun ^a   Grekov, Alexander ^a   Santi, Enrico ^a   Hudgins, Jerry ^b   Mantooth, Alan ^c  

^a UNIVERSITY OF SOUTH CAROLINA   (United States)

^b UNIVERSITY OF NEBRASKA LINCOLN   (United States)

^c UNIVERSITY OF ARKANSAS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER DISTRIBUTIONS; CURRENT SATURATION; CURRENT SPREADING; DEVICE GEOMETRIES; DMOSFET; DRAIN-SOURCE VOLTAGE; FINITE ELEMENT SIMULATIONS; IS DEVELOPMENT; NONUNIFORM CURRENT DISTRIBUTIONS;

ENERGY CONVERSION; SILICON CARBIDE;

DRAIN CURRENT;

EID: 78650079098     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECCE.2010.5617830     Document Type: Conference Paper

References (8)

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