ZnO films prepared by two-step MOCVD process for use as front TCO in silicon-based thin film solar cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2010, Pages 1508-1511

  Hongsingthong, Aswin ^a   Yunaz, Ihsanul Afdi ^a   Miyajima, Shinsuke ^a   Konagai, Makoto ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL PROPERTY; MOCVD; OPTICAL REGIONS; SECOND LAYER; SILICON-BASED THIN FILMS; SMALL SPHERES; TWO-STEP DEPOSITION; ZNO FILMS;

ELECTRIC PROPERTIES; METALLIC FILMS; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING SILICON COMPOUNDS; ZINC OXIDE;

FILM PREPARATION;

EID: 78650077584     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2010.5615836     Document Type: Conference Paper

References (9)

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