Quantitative determination of the charge carrier concentration of ion implanted silicon by IR-near-field spectroscopy

Optics Express

Volumn 18, Issue 25, 2010, Pages 26206-26213

  Jacob, Rainer ^a   Winner, Stephan ^a   Schneider, Harald ^a   Helm, Manfred ^a   Wenzel, Marc Tobias ^b   Von Ribbeck, Hans Georg ^b   Eng, Lukas M ^b   Kehr, Susanne C ^c  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^c UNIVERSITY OF ST ANDREWS   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; EXPERIMENTS; FREE ELECTRON LASERS; QUANTUM OPTICS;

CONTROL EXPERIMENTS; DIELECTRIC FUNCTIONS; DOPED LAYERS; DRUDE MODELS; FIXED WAVELENGTH; INFRARED MICROSCOPE; ION-IMPLANTED SILICON; NEAR-FIELD; NEAR-FIELD SPECTROSCOPY; PHASE INFORMATION; QUANTITATIVE DETERMINATIONS; TUNABLE RADIATION;

CARRIER CONCENTRATION;

ION; SILICON;

ALGORITHM; ARTICLE; CHEMISTRY; INFRARED SPECTROPHOTOMETRY; MATERIALS TESTING; METHODOLOGY; STATIC ELECTRICITY;

ALGORITHMS; IONS; MATERIALS TESTING; SILICON; SPECTROPHOTOMETRY, INFRARED; STATIC ELECTRICITY;

EID: 78650053481     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.18.026206     Document Type: Article

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