A new model for the backscatter coefficient in nanoscale MOSFETs

2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010

Volumn , Issue , 2010, Pages 234-237

  Van Der Steen, J L P J ^a   Palestri, P ^b   Esseni, D ^b   Hueting, R J E ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

^b UNIVERSITY OF UDINE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BACKSCATTER COEFFICIENTS; CHANNEL LENGTH; ELASTIC AND INELASTIC SCATTERING; MEAN FREE PATH; MONTE CARLO SIMULATION; NANOSCALE MOSFETS; NEW MODEL;

BACKSCATTERING; ELECTRIC FIELDS; MOSFET DEVICES; NANOSTRUCTURED MATERIALS; SOLID STATE DEVICES;

COMPUTER SIMULATION;

EID: 78649951034     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2010.5618380     Document Type: Conference Paper

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