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Volumn 6, Issue 23, 2010, Pages 2748-2754

High-on/off-ratio graphene nanoconstriction field-effect transistor

(6) Lu, Ye a Goldsmith, Brett a Strachan, Douglas R b Lim, Jong Hsien c Luo, Zhengtang a Johnson, A T Charlie a

a UNIVERSITY OF PENNSYLVANIA (United States)

b UNIVERSITY OF KENTUCKY (United States)

c SWARTHMORE COLLEGE (United States)

Author keywords

fabrication; field effect transistors; graphene; nanoconstriction

Indexed keywords

ELECTROMIGRATION; FABRICATION; FEEDBACK; GRAPHENE; GRAPHENE TRANSISTORS; LITHOGRAPHY; SEMICONDUCTOR QUANTUM DOTS;

CRITICAL DIMENSION; GRAPHENE FETS; INDUCED ENERGY; LARGE ROOMS; NANOCONSTRICTIONS; ON-STATE RESISTANCE; ON/OFF RATIO; SHARP INCREASE;

FIELD EFFECT TRANSISTORS;

GRAPHITE;

ARTICLE; CHEMISTRY; METHODOLOGY; NANOTECHNOLOGY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR;

GRAPHITE; MICROSCOPY, ELECTRON, SCANNING; NANOTECHNOLOGY; TRANSISTORS, ELECTRONIC;

EID: 78649935320 PISSN: 16136810 EISSN: 16136829 Source Type: Journal
DOI: 10.1002/smll.201001324 Document Type: Article

Times cited : (84)

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