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Volumn 49, Issue 2, 2011, Pages 732-736
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The formation of a dual-layer carbon film on silicon carbide using a combination of carbide-derived carbon process and chemical vapor deposition in a CCl4 - Containing atmosphere
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Author keywords
[No Author keywords available]
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Indexed keywords
CARBON FILMS;
CHLORINATION;
CHLORINE COMPOUNDS;
FILM GROWTH;
SCANNING ELECTRON MICROSCOPY;
SILICON CARBIDE;
THERMOGRAVIMETRIC ANALYSIS;
X RAY DIFFRACTION;
CARBIDE DERIVED CARBON;
CHEMICAL VAPOR DEPOSITIONS (CVD);
DUAL LAYER;
FORMATION MECHANISM;
PYROLYZING;
SUB-LAYERS;
TOP LAYERS;
CHEMICAL VAPOR DEPOSITION;
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EID: 78649916841
PISSN: 00086223
EISSN: None
Source Type: Journal
DOI: 10.1016/j.carbon.2010.10.026 Document Type: Letter |
Times cited : (8)
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References (9)
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