An ONIOM study of H2O interacting with the C-terminated surface of silicon carbide

Chemical Physics Letters

Volumn 501, Issue 1-3, 2010, Pages 87-92

  Liu, Yan ^a,b   Su, Kehe ^a   Wang, Xin ^a   Wang, Yanli ^a   Zeng, Qingfeng ^a   Cheng, Laifei ^a   Zhang, Litong ^a  

^a NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

^b WEINAN NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ADJACENT SURFACES; DISSOCIATIVE ADSORPTION; FIRST-PRINCIPLES; MOLECULAR ADSORPTION; MOLECULAR HYDROGEN; O-H BOND; REACTION CHANNELS;

DISSOCIATION; GAS ADSORPTION; SILICON CARBIDE;

SURFACE REACTIONS;

EID: 78649629671     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cplett.2010.10.059     Document Type: Article

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