Improved impact-ionization modelling and validation with pn-junction diodes

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2010, Pages 287-290

  Pan, Zhihao ^a   Holland, Steffen ^a   Schroeder, Dietmar ^b   Krautschneider, Wolfgang ^b  

^a NXP SEMICONDUCTORS   (Germany)

^b HAMBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN VOLTAGE; DAMAGE LOCATION; ELECTRON IMPACT-IONIZATION; ESD PROTECTION DEVICES; FAILURE LEVELS; HIGH ELECTRIC FIELDS; HIGH FIELD; HIGH-CURRENT; IV CHARACTERISTICS; MODEL PARAMETERS; MODEL-BASED; MODELLING AND VALIDATION; MODERN TECHNOLOGIES; NEW MODEL; NEW PARAMETERS; P-N JUNCTION; PREDICTIVE CAPABILITIES; TEMPERATURE DEPENDENCE; TRANSMISSION LINE PULSE;

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; ELECTRIC TOOLS; MOS DEVICES; PARTICLE DETECTORS; SEMICONDUCTOR DIODES; TEMPERATURE DISTRIBUTION;

IMPACT IONIZATION;

EID: 78649625084     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2010.5604503     Document Type: Conference Paper

References (8)

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