The growth and properties of relaxor-based ferroelectric single crystals

Journal of the American Ceramic Society

Volumn 93, Issue 10, 2010, Pages 2915-2928

  Li, Xiaobing ^a   Luo, Haosu ^a  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BRIDGMAN METHODS; COERCIVE FIELD; DEVICE APPLICATION; FUNDAMENTAL RESEARCH; HIGH CURIE TEMPERATURE; LEAD-FREE MATERIAL; MASS PRODUCTION; MORPHOTROPIC PHASE BOUNDARIES; OPTICAL PERFORMANCE; PIEZOELECTRIC RESPONSE; RELAXOR-BASED FERROELECTRICS; RELAXORS; TIO; TOP SEEDED SOLUTION GROWTH; TRADITIONAL CERAMICS;

CRYSTAL GROWTH FROM MELT; ELECTRIC FIELDS; FERROELECTRIC MATERIALS; LEAD; PHASE TRANSITIONS; PIEZOELECTRICITY;

SINGLE CRYSTALS;

EID: 78649600420     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/j.1551-2916.2010.04107.x     Document Type: Article

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