A Kinetic Monte Carlo study on the dynamic switching properties of electrochemical metallization RRAMs during the SET process

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2010, Pages 19-22

  Pan, Feng ^a   Subramanian, Vivek ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DYNAMIC SWITCHING; IV CHARACTERISTICS; KINETIC MONTE CARLO; MATERIAL PROPERTY; METALLIZATIONS; ON-STATE RESISTANCE; SET VOLTAGE; SIMULATION PROCESS; SIMULATION TOOL; VOLTAGE SWEEP; WRITING SPEED;

METALLIZING; MONTE CARLO METHODS; RANDOM ACCESS STORAGE; SEMICONDUCTOR DEVICES;

ELECTROCHEMICAL PROPERTIES;

EID: 78649585748     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2010.5604584     Document Type: Conference Paper

References (6)

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