An all-active MMIC-based chip set for a wideband 260 - 304 GHz receiver

European Microwave Week 2010: Connecting the World, EuMIC 2010 - Conference Proceedings

Volumn , Issue , 2010, Pages 53-56

  Kallfass, I ^a,b   Tessmann, A ^a   Massler, H ^b   Pahl, P ^a   Leuther, A ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^b KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

Author keywords

H band; MHEMT; Millimeter wave amplifier; Millimeter wave FET frequency conversion; Millimeter wave frequency multiplication; MMICs

Indexed keywords

H-BAND; MHEMT; MILLIMETER WAVE FREQUENCIES; MILLIMETER-WAVE AMPLIFIER; MMICS;

BROADBAND AMPLIFIERS; CIRCUIT THEORY; FREQUENCY MULTIPLYING CIRCUITS; HIGH ELECTRON MOBILITY TRANSISTORS; LOW NOISE AMPLIFIERS; MESFET DEVICES; MILLIMETER WAVE DEVICES; MILLIMETER WAVES; MULTIPLYING CIRCUITS; NOISE FIGURE; POWER AMPLIFIERS;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 78649584585     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. W. R. Deal, X. B. Mei, V. Radisic, W. Yoshida, P. H. Liu, J. Uyeda, M. Barsky, T. Gaier, A. Fung, R. Lai, "Demonstration of a S-MMIC LNA with 16-dB Gain at 340-GHz," in Proc. IEEE Compound Semiconductor Integrated Circuit Symposium CSICS, Portland, pp. 75-78, Oct. 2007.
2. W.R. Deal, X.B. Mei, V. Radisic, B. Bayuk, A. Fung, W. Yoshida, P.H. Liu, J. Uyeda, L. Samoska, T. Gaier, R. Lai, "A balanced sub-millimeter wave power amplifier," IEEE MTT-S International Microwave Symposium Digest, pp. 399-402, June 2008.
3. V. Radisic, X. B. Mei, W. R. Deal, W. Yoshida, P. H. Liu, J. Uyeda, M. Barsky, L. Samoska, A. Fung, T. Gaier, R. Lai, "Demonstration of Sub-Millimeter Wave Fundamental Oscillators Using 35-nm InP HEMT Technology," IEEE Microwave and Wireless Components Letters, vol. 17, no. 3, pp. 223-225, Mar. 2007. (Pubitemid 46393358)
4. A. Tessmann, A. Leuther, V. Hurm, H. Massler, M. Zink, M. Kuri, M. Riessle, R. Lösch, M. Schlechtweg, O. Ambacher, "A 300 GHz mHEMT Amplifier Module," in proc. Indium Phosphide and Related Materials Conf., Newport Beach, pp. 196-199, May 2009.
5. A. Leuther, A. Tessmann, M. Dammann, C. Schwörer, M. Schlechtweg, M. Mikulla, R. Lösch, G. Weimann, "50 nm MHEMT Technology for G-and H-Band MMICs," Int. Conf. on Indium Phosphide and Related Materials (IPRM), Matsue, Japan, pp. 24-27, May 2007.
6. I. Kallfass, A. Tessmann, H. Massler, A. Leuther, M. Schlechtweg, O. Ambacher, "A 200 ghz active heterodyne receiver mmic with low sub-harmonic lo power requirements for imaging frontends," in proc. 4th European Microwave Integrated Circuit Conference, Rome, pp. 45-48, September 2009.
7. I. Kallfass, P. Pahl, H. Massler, A. Leuther, A. Tessmann, S. Koch, T. Zwick, "A 144 GHz Power Amplifier MMIC With 11 dBm Output Power, 10 dB Associated Gain and 10 % Power-Added Efficiency," in proc. IEEE MTT-S International Microwave Symposium, Boston, pp. 429-432, June 2009.
8. A. Tessmann, A. Leuther, V. Hurm, H. Massler, M. Zink, M. Riessle, R. Loesch, "High-Gain Submillimeter-Wave mHEMT Amplifier MMICs," accepted for publication, IEEE MTT-S Int. Microwave Symp., Anaheim, 2010.
9. I. Kallfass, A. Tessmann, H. Massler, D. Lopez-Diaz, A. Leuther, M. Schlechtweg, O. Ambacher, "A 300 ghz active frequency-doubler and integrated resistive mixer mmic," in proc. 4th European Microwave Integrated Circuit Conference, Rome, pp. 200-203, September 2009.