Demonstration of intrinsic tristability in double-barrier resonant tunneling diodes with the wigner transport equation

IEEE Transactions on Electron Devices

Volumn 57, Issue 12, 2010, Pages 3265-3274

  Yoder, P Douglas ^a   Grupen, M ^b   Smith, R Kent ^c  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c LUCENT TECHNOLOGIES   (United States)

Author keywords

Numerical analysis; quantum effect semiconductor devices; resonant tunneling diodes (RTDs); semiconductor device modeling

Indexed keywords

APPLIED BIAS; ASYMPTOTIC BEHAVIORS; BOLTZMANN COLLISION; COLLISION OPERATORS; COUPLED SOLUTION; DEVICE OPERATIONS; DOUBLE BARRIERS; HIGH-ELECTRON-DENSITY; INTRINSIC PROPERTY; MULTIVALUED FUNCTIONS; NONEQUILIBRIUM STATISTICS; NUMERICAL SOLUTION; QUANTUM EFFECT SEMICONDUCTOR DEVICES; RELAXATION TIME APPROXIMATION; SELF-CONSISTENT CALCULATION; SEMICONDUCTOR DEVICE MODELING; TRANSPORT EQUATION; TRISTABILITY;

BOUNDARY CONDITIONS; MATHEMATICAL OPERATORS; NUMERICAL ANALYSIS; POISSON EQUATION; QUANTUM ELECTRONICS; RELAXATION PROCESSES; RESONANT TUNNELING; RESONANT TUNNELING DIODES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR SWITCHES;

SEMICONDUCTOR DIODES;

EID: 78649364714     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2081672     Document Type: Article

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