Room temperature terahertz detection in high-electron-mobility transistor structure using InAlAs/InGaAs/InP Material Systems

IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide

Volumn , Issue , 2010, Pages

  El Moutaouakil, A ^a   Suemitsu, T ^a   Otsuji, T ^a   Coquillat, D ^b   Knap, W ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b UNIVERSITÉ MONTPELLIER 2   (France)

Author keywords

[No Author keywords available]

Indexed keywords

INALAS/INGAAS/INP; MATERIAL SYSTEMS; NONRESONANT; ROOM TEMPERATURE; TERAHERTZ DETECTION; THZ RADIATION;

ELECTRIC RECTIFIERS; HIGH ELECTRON MOBILITY TRANSISTORS; SEMICONDUCTING ALUMINUM COMPOUNDS;

TERAHERTZ WAVES;

EID: 78649343419     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIMW.2010.5612598     Document Type: Conference Paper

References (8)

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