NIR sensitivity enhancement by laser treatment for Si detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 624, Issue 2, 2010, Pages 520-523

  Yamamoto, K ^a   Sakamoto, A ^a   Nagano, T ^a   Fukumitsu, K ^a  

^a CENTRAL RESEARCH LABORATORY   (Japan)

Author keywords

NIR sensitivity enhancement

Indexed keywords

IMAGE ENHANCEMENT; INFRARED DEVICES; LIGHT ABSORPTION; PHOTODIODES; ULTRASHORT PULSES;

APPLIED VOLTAGES; DEVICE CHARACTERISTICS; HIGH SENSITIVITY; LIGHT ABSORPTION COEFFICIENTS; SENSITIVITY ENHANCEMENTS; SHORT WAVELENGTHS; SILICON PHOTODIODE; ULTRA-SHORT PULSE LASER;

SILICON WAFERS;

EID: 78649305387     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2010.03.128     Document Type: Article

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