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Journal of Materials Chemistry

Volumn 20, Issue 46, 2010, Pages 10445-10451

Defects and dislocations in MgO: Atomic scale models of impurity segregation and fast pipe diffusion

(4) Zhang, Feiwu a Walker, Andrew M b,c Wright, Kate a Gale, Julian D a

a CURTIN UNIVERSITY (Australia)

b UNIVERSITY COLLEGE LONDON (United Kingdom)

c UNIVERSITY OF BRISTOL (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC-SCALE MODEL; DEFECT SPECIES; DIFFUSION OF VACANCIES; DISLOCATION CORE; DISLOCATION LINES; DISLOCATION-FREE; EDGE DISLOCATION; EXTENDED DEFECT; GLIDE PLANES; HALF-PLANES; IMPURITY SEGREGATION; IONIC MATERIALS; LOW TEMPERATURES; PERFECT CRYSTALS; PIPE DIFFUSION; STRESS FIELD; VACANCY MIGRATION;

ACTIVATION ENERGY; BINDING ENERGY; CRYSTAL IMPURITIES; CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; DEFECTS; DIFFUSION BARRIERS; IONS; PIPE; POINT DEFECTS; REMOVAL; STRESSES; VACANCIES;

EDGE DISLOCATIONS;

EID: 78649274137 PISSN: 09599428 EISSN: 13645501 Source Type: Journal
DOI: 10.1039/c0jm01550d Document Type: Article

Times cited : (43)

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