25.8-Gbps direct modulation of 1.3-μm-wavelength AlGaInAs distributed reflector lasers

Technical Digest - 15th OptoElectronics and Communications Conference, OECC2010

Volumn , Issue , 2010, Pages 54-55

  Otsubo, K ^a,b   Matsuda, M ^a,b   Uetake, A ^a,b   Okumura, S ^a   Tomabechi, S ^a   Ekawa, M ^a,b   Yamamoto, T ^a,b  

^a FUJITSU LABORATORIES LTD   (Japan)

^b PHOTONICS ELECTRONICS TECHNOLOGY RESEARCH ASSOCIATION PETRA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAINAS; DIRECT MODULATION; DISTRIBUTED REFLECTOR LASER; DISTRIBUTED-REFLECTOR LASERS; MQW ACTIVE LAYER; OUTPUT POWER;

REFLECTION;

OPTOELECTRONIC DEVICES;

EID: 78649273221     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. IEEE802.3ba, 40 Gb/s and 100 Gb/s Ethernet Task Force, http://www.ieee802.org/3/ba/.
2. K. Otsubo, et al., "Uncooled 25-Gbit/s direct modulation of semi-insulating buried-heterostructure 1.3-μm AlGaInAs quantum-well DFB lasers," Electron. Lett., vol. 44, no. 10, pp. 631-633, 2008.
3. A. K. Verma et al., "25Gbps 1.3μm DFB Laser for 10- 25km Transmission in 100GBE Systems," Optical Fiber Communication Conference and Exposition and The National Fiber Optic Engineers Conference, 2009, San Diego, CA, Paper OThT2.
4. T. Tadokoro et al., "Operation of a 25-Gbps Direct Modulation Ridge Waveguide MQW-DFB Laser up to 85°C", Optical Fiber Communication Conference and Exposition and The National Fiber Optic Engineers Conference, 2009, San Diego, CA, Paper OThT3.
5. H. Yagi et al., "26 Gbit/s Direct Modulation of AlGaInAs/InP Lasers with Ridge-Waveguide Structure Buried by Benzocyclobutene Polymer," Proc. of InP and Related Compounds,2009, pp. 371-374.
6. T. Fukamachi et al., "95°C Uncooled and High Power 25- Gbps Direct Modulation of InGaAlAs Ridge Waveguide DFB Laser," European conference on Optical Communication (ECOC2009), Vienna, Austria, Paper 8.1.5.
7. K. Otsubo et al., "40-Gb/s Direct Modulation with Reduced Driving Current Using 1.3-μm Semi-Insulating Buried-Heterostructure AlGaInAs-MQW Distributed Reflector (DR) Lasers," Optical Fiber Communication Conference and Exposition and The National Fiber Optic Engineers Conference, 2009, San Diego, CA, Paper OThT6.
8. J.-I. Shim et al., "Lasing Characteristics of 1.5 μm GaInAsP-InP SCH-BIG-DR Lasers," IEEE J. Quantum Electron., vol. 27, no. 6, pp. 1736-1745, 1991.