Enhanced power factor of Indium co-doped ZnO:Al thin films deposited by RF sputtering for high temperature thermoelectrics

Journal of Alloys and Compounds

Volumn 509, Issue 3, 2011, Pages 1094-1098

  Teehan, Sean ^a   Efstathiadis, Harry ^a   Haldar, Pradeep ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

Microstructure; Oxide materials; Sputtering; Thermal stability; Thermoelectrics

Indexed keywords

AL-DOPED ZNO; CO-DOPED ZNO; CO-DOPING; CRYSTALLINITIES; DOPING LEVELS; DUAL MAGNETRON SPUTTERING SYSTEM; ELECTRICAL CONDUCTIVITY; FILM MICROSTRUCTURES; HIGH TEMPERATURE; NEGATIVE IMPACTS; OXIDE MATERIALS; POWER FACTORS; RF-POWER; RF-SPUTTERING; THERMAL STABILITY; THERMOELECTRIC POWER FACTORS; THERMOELECTRIC PROPERTIES; THERMOELECTRICS; THERMOPOWERS; ZNO; ZNO MATRIX;

ALUMINUM; AUGER ELECTRON SPECTROSCOPY; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRIC POWER FACTOR; MICROSTRUCTURE; SCANNING ELECTRON MICROSCOPY; THERMODYNAMIC STABILITY; THERMOELECTRIC POWER; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

INDIUM;

EID: 78449232488     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2010.10.004     Document Type: Article

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