Electrical transport properties of SnS and SnSe single crystals grown by direct vapour transport technique

Chalcogenide Letters

Volumn 6, Issue 10, 2009, Pages 549-554

  Nariya, B B ^a   Dasadia, A K ^a   Bhayani, M K ^a   Patel, A J ^a   Jani, A R ^a  

^a SARDAR PATEL UNIVERSITY   (India)

Author keywords

Single crystal; Sns; SnSe; Vapour transport technique

Indexed keywords

EID: 78249283644     PISSN: 15848663     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (30)

1. Okazaki, J. Phys. Soc. Japan, 13, 1151 (1958).
2. S. Logothetidis and H.M. Polatoglou, Phys. Rev., B36, 7491 (1987).
3. G. Valiukonis, D.A. Gussienova, G. Krivaite and A. Sileika, Phys. Stat. Solidi (b), 135, 299 (1986).
4. D.I. Bletskan, I.F. Kopinets, P.P. Pogoretskii, E.N. Salkova and D.V. Chepce, Kristallographica, 20, 1008 (1975).
5. M. Parentau and M. Carlone, Phys. Rev., B41, 5227 (1990).
6. D.I. Bletskan, V.I. Taran, and M. YU. Sichka, Ukr. Fiz. Zh., 21, 1436 (1976).
7. J.P. Singh and R.K. Bedi, J. Appl. Phys., 68 2776 (1990).
8. R.K Bedi, B.S.V. Gopalan and J. Majhi, Conference on the Physics and Technology of Semiconductor Device and Integrated Circuits, SPIE Publications, 104 (1992).
9. J.J Lofersky, J.Appl. Phys., 27, 777 (1956).
10. J.J Lofersky, Proc. I.E.E.E., 51, 667 (1963).
11. M. Rodoat, Acta Electronica, 18, 345 (1975).
12. M. Rodoat, Rev. Phys. Appl., 12, 411 (1977).
13. M. Parentau and M. Carlone, Phys. Rev., B41, 5227 (1990).
14. D.I. Bletskan, V.I. Taran, and M. YU. Sichka, Ukr. Fiz. Zh., 21, 1436 (1976).
15. Hanawalt et al., Anal. Chem., 10, 475 (1938).
16. Mosburg et al., U.S. Geol. Surv. Prof. Paper, 424C, 347 (1961).
17. Moh, Neuse Jahrb Mineral., Abh., 111, 227 (1969).
18. Moh, Chem. Erde, 33, 243 (1974).
19. L. Calvert, National Research Council of Canada, Ottawa Canada, ICDD Grant-in-Aid, (1981).
20. H. Wiedemeier, Csillag, Z. Kristallogr., 149, 17 (1974).
21. A. Sugaki, A. Kitakaze, H. Kitakaze, Sci. Rep. Tohoku Univ., 16, 199 (1985).
22. A. P. Lambross, D. Geraleas and N.A. Economou, J. Phys. Chem. Solids, 35, 537 (1974).
23. A. Okazaki and I. Ueda, J. Phys. Soc. Japan. 11, 470 (1956).
24. A. K. Garg, A.K. Jain and O.P. Agnihotri, Ind. J. Pure and Appl. Phys., 21, 276 (1983).
25. Julien, M. Eddrief, I. Samara and M. Balkanski, Mat. Sci. and Engg., B15, 70 (1992).
26. H. Maier and D.R. Daniel, J. Electron. Mat., 6, 693 (1977).
27. Ajay Agarwal, P.D. Patel and D. Laxminarayan, J. Crystal. Growth, 142, 344 (1994).
28. Ajay Agarwal, J. Crystal Growth, 142, 344 (1994).
29. Tallman, Doyle, Westinghouse Research laboratories, Pihaburgh, Pennsylvania, USA, Private Communication.
30. Nesterova et. Al., Russ. J. Inorgan. Chem. (Engl. Trabsl.), 6, 103 (1961).