Voltage-dependent quantum efficiency measurements of amorphous silicon multi-junction mini-modules

Solar Energy Materials and Solar Cells

Volumn 95, Issue 1, 2011, Pages 123-126

  Hibberd, C J ^a   Plyta, F ^a   Monokroussos, C ^a   Bliss, M ^a   Betts, T R ^a   Gottschalg, R ^a  

^a LOUGHBOROUGH UNIVERSITY   (United Kingdom)

Author keywords

Amorphous silicon; Bias dependence; Multi junction; Quantum efficiency; Spectral response

Indexed keywords

AMORPHOUS SILICON (A-SI); BIAS-DEPENDENCE; CURRENT VOLTAGE; CURRENT-VOLTAGE DATA; DISPERSION CURVES; EXTERNAL QUANTUM EFFICIENCY; HIGHER EFFICIENCY; JUNCTION DEVICES; MISMATCH FACTOR; MULTI JUNCTION SOLAR CELLS; MULTI-JUNCTION; QUANTUM EFFICIENCY MEASUREMENTS; SI DEVICES; SI SOLAR CELLS; SINGLE JUNCTION; SINGLE JUNCTION DEVICES; SOLAR ELECTRICITY; SPECTRAL MISMATCH; SPECTRAL RESPONSE;

AMORPHOUS SILICON; BIAS VOLTAGE; CALIBRATION; SOLAR CELLS;

QUANTUM EFFICIENCY;

EID: 78149361225     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2010.03.039     Document Type: Conference Paper

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