SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 519, Issue 3, 2010, Pages 1007-1011

Effect of cadmium sulphide quantum dot processing and post thermal annealing on P3HT/PCBM photovoltaic device

(5) Khan, M Taukeer a,b Bhargav, Ranoo a Kaur, Amarjeet b Dhawan, S K a Chand, S a

a NATIONAL PHYSICAL LABORATORY (India)

b UNIVERSITY OF DELHI (India)

Author keywords

Charge transfer complex; P3HT; Quantum dots; Solar cells

Indexed keywords

ACTIVE LAYER; BLUE SHIFT; CADMIUM SULPHIDE; CDS; CDS NANOPARTICLES; CHARGE TRANSFER COMPLEX; DEVICE CONFIGURATIONS; DEVICE EFFICIENCY; DEVICE PARAMETERS; DEVICE PERFORMANCE; EXCITED ELECTRONS; INDIUM TIN OXIDE; MATRIX; NANOCOMPOSITE FILM; P3HT; PEDOT:PSS; PHOTOVOLTAIC DEVICES; PHOTOVOLTAIC PERFORMANCE; POLY(STYRENE SULFONATE); POLY-3-HEXYLTHIOPHENE; POST-PRODUCTION; POST-THERMAL ANNEALING; QUANTUM CONFINEMENT EFFECTS; QUANTUM DOT; QUANTUM DOTS; SOLAR CELL PERFORMANCE; THERMAL-ANNEALING; UV-VIS ABSORPTIONS;

ABSORPTION; CADMIUM; CADMIUM COMPOUNDS; CADMIUM SULFIDE; CHARGE TRANSFER; INDIUM COMPOUNDS; ION EXCHANGE; MASS TRANSFER; NANOCOMPOSITES; OPTICAL WAVEGUIDES; SOLAR CELLS; STYRENE; TIN; TIN OXIDES; TITANIUM COMPOUNDS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 78049303056 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2010.08.032 Document Type: Conference Paper

Times cited : (51)

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