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Volumn 50, Issue 11-12, 2010, Pages 750-753

Mechanical and transport properties of low-temperature negative thermal expansion material Mn3CuN co-doped with Ge and Si

Author keywords

A. Ceramics; C. Electrical resistivity; C. Mechanical properties; C. Thermal conductivity; C. Thermal expansion

Indexed keywords

A. CERAMICS; C. MECHANICAL PROPERTIES; C. THERMAL CONDUCTIVITY; C. THERMAL EXPANSION; ELECTRICAL RESISTIVITY;

EID: 78049239964     PISSN: 00112275     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cryogenics.2010.09.001     Document Type: Article
Times cited : (21)

References (13)
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    • Negative thermal expansion
    • J.N. Grima, V. Zammit, and R. Gatt Negative thermal expansion Xjenza 11 2006 17 29
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    • Grima, J.N.1    Zammit, V.2    Gatt, R.3
  • 8
    • 29744454143 scopus 로고    scopus 로고
    • Giant negative thermal expansion in Ge-doped anti-perovskite manganese nitrides
    • K. Takenaka, and H. Takagi Giant negative thermal expansion in Ge-doped anti-perovskite manganese nitrides Appl Phys Lett 87 26 2005 261902
    • (2005) Appl Phys Lett , vol.87 , Issue.26 , pp. 261902
    • Takenaka, K.1    Takagi, H.2
  • 9
    • 38049040735 scopus 로고    scopus 로고
    • Negative thermal expansion in Ge-free antiperovskite manganese nitrides: Tin-doping effect
    • K. Takenaka, K. Asano, M. Misawa, and H. Takagi Negative thermal expansion in Ge-free antiperovskite manganese nitrides: tin-doping effect Appl Phys Lett 92 1 2008 011927
    • (2008) Appl Phys Lett , vol.92 , Issue.1 , pp. 011927
    • Takenaka, K.1    Asano, K.2    Misawa, M.3    Takagi, H.4
  • 11
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    • Zero thermal expansion in YbGaGe due to an electronic valence transition
    • J.R. Salvador, F. Guo, T. Hogan, and M.G. Kanatzidis Zero thermal expansion in YbGaGe due to an electronic valence transition Nature 425 6959 2003 702 705
    • (2003) Nature , vol.425 , Issue.6959 , pp. 702-705
    • Salvador, J.R.1    Guo, F.2    Hogan, T.3    Kanatzidis, M.G.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.