Oxide electronics: Upward mobility rocks!

Nature Materials

Volumn 9, Issue 11, 2010, Pages 881-883

  Schlom, Darrell G ^a   Pfeiffer, Loren N ^b  

^a Cornell University   (United States)

^b Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; CRYSTAL IMPURITIES; DISLOCATIONS (CRYSTALS); ELECTRON GAS; QUANTUM HALL EFFECT; SEMICONDUCTOR DOPING; TWO DIMENSIONAL ELECTRON GAS;

CHEMICAL CHARACTERIZATION; ELECTRICAL TRANSPORT; FRACTIONAL QUANTUM HALL EFFECTS; HIGH QUALITY CRYSTALS; MODULATION DOPING; POLARIZATION DOPING; TECHNOLOGICAL ADVANCEMENT; TWO-DIMENSIONAL ELECTRON GAS (2DEG);

SINGLE CRYSTALS;

EID: 77958510338     PISSN: 14761122     EISSN: 14764660     Source Type: Journal    
DOI: 10.1038/nmat2888     Document Type: Article

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