Accurate extraction of conduction parameter in MOSFETs on Si(110) surface

AIP Conference Proceedings

Volumn 893, Issue , 2007, Pages 1393-1394

  Gaubert, P ^a   Teramoto, A ^a   Hamada, T ^a   Suwa, T ^a   Ohmi, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Mobility; Mobility attenuation factor; MOS transistor; Silicon; Surface orientation

Indexed keywords

EID: 77958452940     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.2730424     Document Type: Conference Paper

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