Application of the effective temperature concept to high electric field and low temperature transport in a-Sil-yTay:H

Czechoslovak Journal of Physics

Volumn 46, Issue SUPPL. 5, 1996, Pages 2565-2566

  Popescu, Benedict ^a   Wright, Trevor ^b   Iovan, Stefan ^c  

^a Concept Institute ^*  (Romania)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77958193869     PISSN: 00114626     EISSN: 15729486     Source Type: Journal    
DOI: 10.1007/BF02570269     Document Type: Article

References (5)

1. Shklovskii, B. I., Fiz. Tech. Poluprovodn., 6 (1972) 2335.
2. Shklovskii, B. I. et al, in Advances in Disordered Semiconductors, World Sci., Singapore, Vol.3, 1990, p. 161.
3. Nebel, C. E. et al, Phys. Rev. B, 46 (1992) 6803.
4. Hundhausen, M. et al, 16th Int. Conf. on Amorphous Semiconductors, Kobe, Japan, Sept. 4-8, 1995.
5. Popescu, B., Iovan, S., in the Proceedings of the 6th Int. Conf. on Hopping and Related Phenomena, p. 149